Magnachip Semiconductor Corp. launched a new 650V, insulated-gate bipolar transistor. Magnachip’s new 650V IGBT is equipped with field stop trench technology, which allows for fast switching speeds and high breakdown voltages. It will be mass produced by Magnachip this month.
The latest technology has resulted in a 30% increase in the current density of the 650V IGBT. This IGBT is also designed to provide a minimum short-circuit withstand time of 5µs. Because of its positive thermo coefficient, it is ideal for parallel switching. Parallel switching of this IGBT increases the load current, and thus the maximum output potential.
In addition, the 650V IGBT features anti-parallel diodes for fast-switching and low-switching loss, while guaranteeing a maximum operating junction temperature of 175°C. This new IGBT is based on standards from the Joint Electron Device Engineering Council. It can be widely used in applications that require high power level and efficiency such as universal power inverters, uninterruptible supply of power supplies, solar boost inverters, and converters.
“Magnachip’s first IGBT was introduced in 2013, and since then, we have been committed to developing high-efficiency products for a variety of markets, while strengthening our presence around the world,” states YJ Kim, CEO of Magnachip. “With this new product, we are expanding our efforts to deliver high-performance products for the eco-friendly renewable energy market.”